| 摘要 |
PURPOSE:To avoid the deterioration in the electric properties of the semiconductor device by selecting a beam region having energy density and uniformity adapted for an annealing when an ion implantation layer formed on a semiconductor wafer is annealed with a laser beam and treating chips one by one through a mask. CONSTITUTION:The laser beam 16 from a laser beam generator 11 is irradiated through a lens 12, a mirror 13 and the mask 14 on the semiconductor wafer 15 formed with a number of chips 151-155, and the layer in the chip is thus annealed. In this configuration the mask 14 is formed of two sheets of L-shaped members 141, 142, either of which is moved, thereby varying the size of an opening 14A formed. The size of the opening 14A is so formed that the beam 16 may not be irradiated to the adjacent chips to expose the periphery within the scribing line of each chip, and the beam 16 is selected from the beams for the region adapted for the annealing. |
