| 摘要 |
PURPOSE:To decrease the size of the semiconductor device by forming a polysilicon collector leading part and base and base leading part in multilayer as connected to the epitaxial layer having small area and particularly forming the base and base leading part in high density with the emitter layer formed thereby. CONSTITUTION:An n type epitaxial layer 3 is formed on an Si substrate 1 having an n<+> type buried layer 2, elements are isolated, windowns are opened at the oxide film 6, and the n<+> type collector leading part 5 is formed thereat. The insular layer 3 may have extremely small area. Windows are selectively opened at the oxide film 6, a polysilicon film 7 is accumulated thereon, ions are selectively injected thereto, and an n<+> type layer 7n and a p<+> type layer 7p are formed thereon. Then, the layer 7 is patterned, and the n<+> type collector leading part 8 and the p<+> type base and leading part 9 are formed thereon. It is thermally oxidized, an oxide film 10 is covered thereon, a window 10e is opened thereat, an n<+> type emitter 11 is formed, and electrodes 12-14 are attached thereto. According to this configuration the device can be remarkably reduced in size, increased in density, reduced in additional capacity, and accelerated in operating speed. |
