发明名称 |
Bias circuit for a field effect transistor. |
摘要 |
<p>A field effect transistor (1) bias circuit is presented which exhibits a low impedance for small signals and a high impedance for large signals. This circuit uses an operational amplifier (6) to provide a temperature compensated low inpe- dance voltage source for the gate bias which is optimal for small signal operation. In the presence of a large signal, the gate begins to draw current. This causes the operational amplifier to saturate and transforms the bias circuit into a high impedance source, which is optimal for large signal operation.</p> |
申请公布号 |
EP0033198(A1) |
申请公布日期 |
1981.08.05 |
申请号 |
EP19810300113 |
申请日期 |
1981.01.12 |
申请人 |
FORD AEROSPACE & COMMUNICATIONS CORPORATION |
发明人 |
RUBIN, MICHAEL DAVID;HO, PANG TING |
分类号 |
H03G3/30;H03F1/30;H03F1/02;(IPC1-7):03F3/21;03F1/56 |
主分类号 |
H03G3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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