发明名称 Bias circuit for a field effect transistor.
摘要 <p>A field effect transistor (1) bias circuit is presented which exhibits a low impedance for small signals and a high impedance for large signals. This circuit uses an operational amplifier (6) to provide a temperature compensated low inpe- dance voltage source for the gate bias which is optimal for small signal operation. In the presence of a large signal, the gate begins to draw current. This causes the operational amplifier to saturate and transforms the bias circuit into a high impedance source, which is optimal for large signal operation.</p>
申请公布号 EP0033198(A1) 申请公布日期 1981.08.05
申请号 EP19810300113 申请日期 1981.01.12
申请人 FORD AEROSPACE & COMMUNICATIONS CORPORATION 发明人 RUBIN, MICHAEL DAVID;HO, PANG TING
分类号 H03G3/30;H03F1/30;H03F1/02;(IPC1-7):03F3/21;03F1/56 主分类号 H03G3/30
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