| 摘要 |
PURPOSE:To obtain highly efficient photoelectric converter by providing a transparent and conductive nitride layer between a semiconductor layer and a transparent conductive layer. CONSTITUTION:The transparent and conductive nitride layer is artificially provided on a semiconductor layer, and the hetero-junction with the upper transparent conductive layer is formed. Since this nitride layer does not have active O2, the layer is chemically stable, hard to react chemically with the semiconductor layer or the transparent conductive layer even though the layer is subjected to heat, and hard to react with impurities from the outside. Therefore, even though the device is left in the high temperature environment for the long time, the height and thickness of the barrier of the hetero-junction are hardly changed and the photoelectric conversion efficiency is not changed. In general, since the width of the energy band of the nitride is smaller than that of oxide, the nitride itself is easily conducted. Therefore, the photoelectric conversion efficiency of the hetero-junction type photoelectric converter with this structure is remarkably high. The nitride layer is formed by Si3N4 and further the conductive metal nitride layer. |
