| 摘要 |
<p>PURPOSE:To obtain the low resistance resistor having large electric power capacity by covering an insulating layer on a good thermal conductive metal substrate, forming a conductive path thereon, covering the edge of the path with a mask and forming an Ni-plated layer from the end of the path to the exposed part of the insulating layer. CONSTITUTION:An Al2O3 film 3 as an insulator is formed on an aluminum substrate having good thermal conductivity, and a copper foil 4 is bonded through an adhesive resin 3 thereon. Then, the copper foil 4 is etched to a predetermined pattern with a solution such as ferric chloride or the like, a conductive path 4 formed of the copper foil 4 is thus formed, a resist film 6 is covered on the part except the resistor forming part and exposed rough Al2O3 film 2, the part covered with no film 6 is activated, and Ni may be easily adhered. Thereafter, Ni-plating is conducted, Ni low resistance resistor 7 is formed on the part covered with no film 6, the film 6 is removed together with the Ni covered on the edge, and the resistor 7 of predetermined shape is thus formed.</p> |
