Input protection device for insulated gate field effect transistor

摘要

An input protection device comprising at least one pair of N and P type MOSFETs having their conduction paths series connected between a source of operating potential and the input of the circuit to be protected. Another variation includes a second pair of similarly connected N and P type MOSFETs with one pair connected between the input to be protected and the most negative source of operating potential while the second pair is connected between the most positive source of operating potential and the input to be protected.