| 摘要 |
PURPOSE:To obtain a target with a decreased dark-current value by preserving a base plate with relative humidity less than the prescribed level and a nesa film set on the base plate before a germanium-oxide film is formed over the base plate and the nesa film, and followed by the formation of a photoconductive layer either straight on the germanium-oxide film or with a cerium-oxide film interposed between the germanium-oxide film and the photoconductive layer. CONSTITUTION:A nesa film 2 and a germanium-oxide film 3 are formed over a glass base-plate 1, in that order. Next, a photoconductive layer 5 is formed through vacuum evaporation either straight on the film 3 or with a thin conductive layer 4 made of a composite material which comprises not less than one of zinc selenide, zinc oxide and cerium oxide, thus a target being constituted. Before forming the film 3, the base plate 1 and the nesa film 2 should be preserved in a place where relative humidity is below 10%. As a result, no adhesive moisture is allowed to occur between the nesa film 2 and the film 3, and the deterioration of the hole injection- proof effect which is caused from the nesa-film side is prevented. Consequently, a target with an effectively small value of dark current can be obtained. |
