发明名称 |
FET Containing stacked gates |
摘要 |
A field effect transistor (FET) comprising a floating gate and a control gate in a stacked relationship with each other and being self-aligned with each other and self-aligned with respect to source and drain regions. The fabrication technique employed comprises delineating both the floating gate and control gate in the same lithographic masking step.
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申请公布号 |
US4282540(A) |
申请公布日期 |
1981.08.04 |
申请号 |
US19790086608 |
申请日期 |
1979.10.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NING, TAK H.;OSBURN, CARLTON M.;YU, HWA N. |
分类号 |
H01L21/033;H01L21/28;H01L29/49;H01L29/788;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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