发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily discharge a static electricity accumulated at a package cap of an LSI by a method wherein a discharging wire which is higher than other wires for wiring connection and is nearer to a cap than other wiring connecting wires is installed at a substrate earth part and a package earth part of a semiconductor element. CONSTITUTION:A dummy wire 5a is bounded to earth parts of a substrate 4 two times to form a loop and the height thereof is made higher than other wire 5b for a wiring connection and it is made approach to a cap 9. In performing in this way, when a static electricity is accumulated at the cap 9, a discharge occurs at the dummy wire 5a and further, the static electricity is not accumulated at the surface of the semiconductor element. Furthermore, an oscillation due to an L constitution is not generated, thus, resulting in an elimination of a mulfunction and a defective characteristics of an LSI.
申请公布号 JPS5694756(A) 申请公布日期 1981.07.31
申请号 JP19790171025 申请日期 1979.12.28
申请人 FUJITSU LTD 发明人 YOSHIDA MASAMICHI
分类号 H01L23/12;H01L21/60;H01L23/00;H01L23/60 主分类号 H01L23/12
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