| 摘要 |
PURPOSE:To improve a uniformity of an etching speed by a method wherein a partition plate which has an opening with an approximately same shape as that of a sample plane and with a size as large as the sample plane is installed in an intermediate part between a plasma generation part and an etching part of a plasma etching device. CONSTITUTION:An external electrode 72 is attached to the upper plane of a cylindrical vacuum container 71 of a plasma etching device and at the lower part of the container where a gas exhaust port 79 is installed, a placing base 77 on which a sample 78 is placed is fixed. Above the sample, a partition plate 73 which has an opening having a diameter same as the sample and has an activation radical inlet conduit 74 protruding to the plasma generation part side is installed and then, an etching gas is induced from a gas inlet conduit 76 and further, a high frequency power is supplied between the electrode 72 and the partition plate 73 to generate a plasma state for performing an etching. With this, over the whole of the sample, an etching of a good uniformity is performed. |
