| 摘要 |
PURPOSE:To prevent an MIS dynamic memory from a soft error by a method wherein a barrier by means of a pn junction is formed and an electron and a hole pair which is generated by an incidence of alpha rays is obstructed by a pn junction barrier. CONSTITUTION:Boron is diffused in to an n type semiconductor substrate 1 to form a p type area 6 and in the p type area 6, a depletion leyer 5 constituting a memory capacitor is generated. A backward bias can be applied to a pn type junction. Even when alpha rays incide to generate the electron. positive hole couples, the majority of the electron positive hole couples generated in an n type semiconductor substrate is intercepted by the barrier of the pn junction and it can not enter an information accumulation area. Accordingly, a soft ware of an MIS dynamic RAM can be prevented from generating an error. |
