| 摘要 |
PURPOSE:To form an electrode having an excellent adhesion and heat conductivity by a method wherein a metallic material composed of a matallic layer is coated to a rear side of a semiconductor substrate formed into an element and an eutectic reaction is performed by applying a heat treatment. CONSTITUTION:A wax 17 is applied to the surface of a semiconductor substrate 11 in which a bipolar transistor is formed and it is secured to a glass substrate 18. Next thereto, the rear face of the substrate 11 is ground upto a thickness of 30 micron or less and a nichrome layer 19 of 500Angstrom and a gold-antimony layer 20 of 2,000Angstrom are sequentially coated to it through an evaporation method. next thereto, taking a photoresist layer 21 as a mask, copper or silver layer 22 is plated with a thickness of 50-60 micron. Finally, removing the photoresist layer 21 and the wax 17, the semiconductor substrate 11 is treated through a heat of more than 370 deg.C of temperature. Performing in such a way, the gold-antimony layer 20 and the semiconductor substrate 11 are in an eutectic reaction and an electrode having a high adhesion and heat conductivity can be obtained. |
