| 摘要 |
PURPOSE:To perform etching at a position located at a prescribed distance from a reference position exactly and with no pollution by detecting a positional reference mark under an organic layer by an O2 ion beam. CONSTITUTION:The positional reference mark is given beforehand by using a material of a different kind of a sample 25 covered with the organic-substance layer 26, and scanning is conducted around the mark by means of the O2 ion beam 24. Then, the secondary ion 30 released from the sample is introduced into a cylindrical magnetic field 31 and a sector magnetic field 32 and separated according to the mass-to-charge ratio of the ion, and the presence of the mark is detected by an electron multiplier 33. A detection signal is amplified 34 and sent to a pulse circuit 35 and the position is detected from the timing of scanning of the beam 24. And, the result of detection is processed by a computer 21 and the position to be etched is fixed at a position located at a prescribed distance from the reference mark. Since the ion beam is employed, the pollution of the sample is little and a pattern of high precision can be obtained.09 |
