| 摘要 |
PURPOSE:To level the surface of the film by forming a hole of small diameter or a narrow groove deeply enough in the surface of an Si substrate, by applying thermal oxidation to fill up the same and further by applying an accelerated ion beam aslant to the surface to etch the oxidized layer. CONSTITUTION:A resist mask having a narrow opening is given to the surface of the Si substrate 20 and reactive spattering is applied to the Si, whereby a vertical etched groove 21 deep sufficiently is formed. The resist being removed, the substrate 20 is heated in oxidizing ambience to fill the groove 21 with a thermally oxidized film 22. On the occasion, the oxidized film 22 grows also on the surface of the Si substrate 20, causing a groove 23 in the center of the groove 21. Next, when the oxidized film on the surface of the substrate is removed through etching by the accelerated ion beam 27 applied aslant, the remaining groove 24 on the oxidized film 22 is made shallow considerably, leaving substantially no difference in level. As the result, neither crack nor disconnection is caused in a thin film formed on the substrate. |
