| 摘要 |
PURPOSE:To obtain a desired element by forming an amorphous semiconductor film on a prescribed substrate and by heating the same selectively by application of a laser beam to convert it into crystalline structure. CONSTITUTION:An Si substrate is provided in opposition to a silica glass substrate 1, PH3 is added into Ar, and a nearly-insulated amorphous Si film 2 containing P is prepared by the glow discharge of SiH4 generated by application of high-frequency electric power. Then, a metallic mask 3 being given to the film, the Ar-ion laser beam is applied thereto selectively, whereby it is heated and converted into a single crystal 4. When the desired element is formed on the film 4, the amorphous Si film 2 is left as an element separating layer. By this constitution, a glass plate is sufficient for the device, with no expensive substrate such as sapphire in SOS being required, and thus the cost for the device can be reduced. |
