| 摘要 |
PURPOSE:To obtain an Si layer with little density of defects to be used for the amorphous semiconductor device which is fitted for a solar cell and the like by laying a metallic layer containing phosphrus intermediately on a substrate when the amorphous Si layer is made to grow on the conducitive substrate. CONSTITUTION:The substrate 1 made of stainless steel is fully purified and immersed in an Ni plating bath having a composition of NiCl2 6H2O, NH4Cl, (NH4)2 HC6H5O7, NaH2PO2 and NH4OH. In this way, electroless Ni plating is applied and thereby an Ni layer 11 conraining P is formed on the surface of the substrate 1. Next, by glow-discharge decomposition or any other methods, the amorphous Si layer such as i-type layer 22 and P<-> type layer 23 is piled on the layer 11 and a collector-electrode 4 is fitted thereto through the intermediary of a transparent electrode layer 3. By this composition, the P in the layer 11 is diffused up to the part 24 of the layer 22 in piling and thereby excellent ohmic contact is generated between the substrate 1 and the layer 22. When this is used for the solar cell, the photoelectric conversion efficiency thereof is improved by about 50% as compared with the conventional cells. |
