| 摘要 |
<p>PURPOSE:To ensure fusion-cutting of a fuse-type switching element by using an alumina film as an insulation film when a soluble body formed of a polycrystalline or amorphous semiconductor layer is provided as the fuse-type switching element on a semiconductor substrate or an insulation substrate through the intermediary of an insulation film. CONSTITUTION:To the substrate 1 formed of silicon or an insulation substance is connected an insulation film 12, whereon the soluble body 13 formed of polycrystalline or amorphous silicon of a prescribed shape is formed. On the occasion, the alumina film is employed as the insulation film 12. The film 12 is deposited by a chemical vapor-phase growing method by using the mixed gas of aluminum chloride and carbon dioxide as a reactive gas and hydrogen as a carrier gas. After that, the whole surface is covered with a phosphorus silicate glass film 5, a window is opened, and aluminum electrode wirings 4 and 4' are fitted to both end parts of the soluble body 13. By this constitution, when the soluble body 13 is blown out by an excessive current due to the surface tension thereof, the soluble body 13 leaks little to the film 12 and thus sure fusion-cutting is performed.</p> |
