| 摘要 |
<p>PURPOSE:To position an etching pattern by removing an organic-substance layer on a positional reference mark through etching by application of an O2 ion beam, applying later the beam to the mark and thereby detecting the position thereof. CONSTITUTION:By application of the O2 ion beam to a region 31 containing the mark 221, the organic-substance layer within the region is removed through etching. Next, scanning 224 is made by means of the O2 ion beam in such a manner than it traverses the mark and values obtained by turnaround scanning are averaged, whereby the position of the mark is determined. In this way, there is no organic- substance layer on the mark 221 from the beginning on the occasion of detection of the position of the mark and, therefore, the lack of uniformity of the line of region of the mark is eliminated. Accordingly, highly-precise detection of the mark position can be performed with few scannings and thereby the etching pattern can be positioned with high precision.</p> |
