| 摘要 |
PURPOSE:To enable the absorption spectral form of a deposit alone in a silicon wafer to be obtd. even if an absorption peak of oxygen overlaps with an absorption peak of the deposit by irradiating the wafer with infrared rays and detecting the absorption wavelengths and spectral form. CONSTITUTION:A silicon wafer is irradiated with infrared rays, and the deposition form of oxygen in the wafer is observed from the absorption wavelengths of the rays and the spectral form. At this time, the absorption spectral form of interstitial oxygen at 9.0mum is obtd. from absorption at 19.5mum, and by subtracting the absorption spectrum of interstitial oxygen from the spectrum of the overlap of a deposit and interstitial oxygen, the absorption spectrum of the deposit alone is observed. |
