发明名称 |
Supply circuit for CMOS memory circuits - has capacitive stage to maintain supply for period following main supply drop=out |
摘要 |
<p>The CMOS memory circuit includes a capacitive stage to provide a power supply condition for a specified period in the event of main supply failure. The main supply (1) feeds a voltage regulator (3) that is coupled to the control stage (4.1) of the memory circuit (4). Typically the memory circuit is a bidirectionalcounter. A comparator (5) monitors the difference in relation to a reference value (Vref 1) to control switching stages (6,7). The circuit responds to a theshold value to maintain a supply provided by a capacitor (8) and diode (9) stage.</p> |
申请公布号 |
DE3002646(A1) |
申请公布日期 |
1981.07.30 |
申请号 |
DE19803002646 |
申请日期 |
1980.01.25 |
申请人 |
SCHOPPE & FAESER GMBH |
发明人 |
JOHN,REINHARD;BAHR,REINHARD |
分类号 |
G11C5/14;G11C11/417;(IPC1-7):11C7/00;11C11/40 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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