| 摘要 |
<p>PURPOSE:To prevent the generation of ground noise or latch-up by reducing a discharge current to the ground by inputting a control signal of a lower potential than that at the time when it is written in the gate of a control transistor. CONSTITUTION:As a means for reducing the discharge current to the ground after the end of write, a control transistor TR consisting of an N-channel MOS transistor is added between an inverter 2 and a booster circuit 3. Then, the source electrode of the control transistor TR is connected to the output node 4 of the inverter 2, and an drain electrode is connected to the booster circuit 3, and further, the control signal A is inputted to a gate through a node 5. When the write is finished, a circuit becomes nonselective, and the discharge current flowing at this time is restricted by the on resistance of the transistor, and the discharge of large capacity charge is carried out not instantaneously while taking some time. Thus, the generation of the ground noise or the latch-up can be prevented.</p> |
