| 摘要 |
PURPOSE:To prevent the generation of the bad coverage of the electrode and the like of the subject device by a method wherein an incineration treatment is performed on a resist using a plasma asher in the etching process following the resist pattern. CONSTITUTION:A negative type or a positive type resist film 15 is formed on a substrate 14 such as an SiO2. Then, following the resist pattern, an etching for the substrate 14 is started and it is discontinued in the middle. Then the film 15 is incinerated using the plasma asher (the dotted line section is removed). Next, after removing the remainder of film 15, an electrode material 16 is evaporated. As a result, the pattern-edge section of the film 14 is processed into a tapered shape, thereby enabling to obtain an excellent evaporated film of the coverage on the electrode material 16. |
