| 摘要 |
PURPOSE:To perform the high yield etching of a sample by a method wherein the sample is protected from contamination by eliminating completely the wet process, and moreover the process from mask formation till etching is performed without exposing the sample to the air. CONSTITUTION:The information of a pattern to be formed with an organic matter layer 6 on the sample 5 is sent from a computer 1 to an O2 ion beam control circuit 2, and the O2 ion beam 4 is controlled by a blanker 34, a deflector 47. The beam 4 is condensed by a lens 33, and is focussed on the layer 6 through the blanker 34, an iris 35, a lens 36, and is controlled the deflection. A driving mechanism 8 of a stand 9 is controlled by the information from the computer 1, and the sample is transferred by a controller 7. The beam is scanned at the etchable region is accoordance with the memory, and the pattern is formed in order. Then a partition plate 10 is opened to transfer the sample to the reaction chamber 11, and the sample 5 is etched introducing 12 a reaction gas. Accordingly the sample is not exposed to the air, and the extremely high yield etching can be performed. |
