发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent a malfunction caused by an incidence of an external light by a method wherein a transistor which allows a current compensating a junction leak to flow to a sense line is provided, and to which a dummy compensating circuit in which a gate voltage of the transistor is controlled and a dummy compensated circuit in which the junction leak is detected are connected. CONSTITUTION:A compensating transistor Q10 which allows the current for compensating the junction leak to flow from a power supply VCC to the sense line SL, and further the dummy compensating circuit A for controlling the gate voltage and the dummy compensated circuit B for detecting the junction leak are additionally provided. The circuit B is composed of a load transistor Q11, a dummy bit line DBL controlling transistor Q12 and a dummy sense line DSL, and the line DSL is connected to the circuit A where changes of potential are detected. That is, the circuit A is comprosed of the load transistor Q13, an inverter consisting of a driver transistor Q14 and the compensating transistor Q15, and the compensating currents to the line DSL are changed dorresponding to changes of the gate voltages.</p>
申请公布号 JPS5693363(A) 申请公布日期 1981.07.28
申请号 JP19790157054 申请日期 1979.12.04
申请人 FUJITSU LTD 发明人 MAEDA KOUICHI;YOSHIDA MASANOBU
分类号 H01L27/10;G11C5/00;G11C16/04;G11C16/06;G11C16/28;G11C17/00;H01L21/8247;H01L29/788;H01L29/792 主分类号 H01L27/10
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