| 摘要 |
PURPOSE:To enable formation of a microscopic diffusing region and affixing of electrodes thereon by a method wherein an oxidation-resistant insulating film is coated on the polycrystalline Si film formed on a semiconductor substrate and this insulating film or the polycrystalline Si film is used as a mask. CONSTITUTION:After providing windows, through which impurities will be injected to the SiO2 film 3 of a semiconductor substrate 1, on the regions 4-7 and a polycrystalline Si film 8 is coated on the substrate 1. Then ion is injected from the regions 4 and 6. Then, after an Si3N4 film 10 and an SiO2 film 11 have been formed, an isolation diffusing region 12 and a collector contact diffusing region 13 are formed. Then an etching is selectively performed on the film 10 and the film 8 is oxidated using the film 10 as a mask. Next, after a base region has been formed by ion injection, a base diffusion region 15 is formed by performing a heat treatment. Then, after the insulating film has been selectively removed, an emitter region 18 and a collector contact diffusing region 19 are formed in regions 13 and 14 through the film 8. Then electrodes 21-24 are coated. |
