| 摘要 |
PURPOSE:To form a high density coating film by making the size of the jet holes of a reaction gas smaller than a limiting value so that arc discharge may not occur. CONSTITUTION:While vacuum-absorbing from an exhaust port 2 to introduce a reaction gas from a gas inlet port 3 into a reaction vessel 1, high frequency electric power is applied between opposing electrodes 4 and 5. In an electrode plate 7 installed on the electrode 4, many jet holes 8 which jet the reaction gas are made, and the diameter of these holes is confined under a limit (for example, 500mum) at which arc discharge does not occur. Reaction gas jetted from the electrode plate 7 is excited by the high frequency power forming plasma and forms a coating film reacting on the surface of a semiconductor substrate 6. By so doing, vapor growth is made possible without causing arc discharge even when the desired high power of an exciting high frequency power source is applied, and a good quality coating film with high density can be formed on a processed object such as a semiconductor substrate. |
