| 摘要 |
PURPOSE:To form a semiconductor memory device to be used exclusively for ''Read'' for 'Writing of Information' during processing stage, by forming and arranging a 'Punch Through' MOSFET and an enhancement MOSFET in correspondence with memory information. CONSTITUTION:Terminal section of plural bid lines 4, which where formed by series connection of plural enhancement-type MOSFET2 for memory cell to a load 1 consisting of a depression-type MOSFET connected to a drain power source wiring VDD, are connected to source lines VSS which are respectively grounded, and a word line 5, which is to be connected to gate of MOSFET formed in the same position as these bit lines 4, is arranged at right angle with the bit lines 4. An information in the bit lines 4, such as MOSFET of memory cell in which 1 is written, is formed by a 'Punch through' FET7 of enhancement type. |
