| 摘要 |
PURPOSE:To keep the surface of CdSe system film formed by depositing smooth and shorten light carrier disappearance time by subjecting the film to heating treatment and annealing treatment under specific conditions. CONSTITUTION:A CdSe system (CdSe, CdSe1-XSX, CdSe1-XTeX) film is formed on an alumina substrate by depositing and subjected to heating treatment in an inactive atmosphere (e.g. nitrogen gas) and the atmosphere of the mixture of an inactive gas and oxygen gas while kept at 650-670 deg.C. Thereby, the surface of the film is kept smooth. Thereafter, the film is cooled gradually and subjected to annealing treatment at 140-180 deg.C in the atmosphere. Thereby, the responsiveness of the film can be raised. |
