| 摘要 |
PURPOSE:To permit good electrical isolation characteristics between each element while maintaining the electrical characteristics of an element by simultaneously inducing compensation atoms with heat treatment to the regions except an active layer to form a semiisolating semiconductor substrate by ion implantation. CONSTITUTION:Cr films 3 for compensation are provided for patterning through SiO2 films 2 on the semiinsulating substrate 1 of III-V group compound semiconductor such as GaAs or the like which doped Cr or the like and ion is implanted to the substrate 1 by consisting Cr, SiO2 films as masks. Next, heat treatment is applied by depositing an SiO2 film 7 on the whole surface of the films 3. And Cr is transmissively diffused under the region existing the Cr films and the Cr in the substrate 1 is externally diffused at the regions existing no Cr films to form an active layer. In this way, the electrical characteristics of an element will be improved as a Cr concentration at the active layer becomes low and the electrical isolation characteristics between each element will also become good as a Cr concentration at the regions except the active layer becomes high. |
