| 摘要 |
PURPOSE:To heat a semiconductor substrate quickly and reduce a heat treatment time by applying an alternating electric field generated by microwaves to utilize dielectric heating. CONSTITUTION:In a metal box 1 with a microwave supplying antenna 2 on its ceiling, a material 3 of high dielectric loss, for example, ferrite, graphite, etc., is placed, and on it, a quartz plate 4 and a semiconductor substrate 5 to be heated are placed. Filling an inert gas in this metal box 1, an alternating electric field generated by microwaves is applied. The frequency of the microwaves is adjusted to about 0.3- 300GHz preferably 2.45GZHz. By so doing, the semiconductor substrate can be heated more quickly than by conventional resistance heating, and a time of treatment such as annealing can be reduced. In addition, the size and weight of the heating device can be reduced. |
