| 摘要 |
PURPOSE:To attain high steric integration by forming a gate electrode of a conductive film provided on a semiconductive substrate formed using an oridinary type of process with an insulating film placed therebetween and a semiconductor device on the conductive film so that the device may intersect with the electrode. CONSTITUTION:An ordinary n channel MOS type FET is formed by providing an n<+> type source region and a drain region 4 in the region surrounded with an field oxide film 2 of a substrate 1 and a gate electrode made of a silicon oxide film on the portion between the both regions 3 and 4 on the surface of the substrate 1. A silicon oxide film 7 is provided on the regions 3 and 4 and a P-N junction is formed by providing a P type polycrystalline silicon film 8 thereon so that the film 8 may contact and intersect with a polycrystalline silicon film 6. A P type junction FET is formed with the upper portion of the junction surface used as channel region and the both sides thereof used as source and drain regions. |
