| 摘要 |
PURPOSE:To make possible to mass-produce metallized elements with no granular feature of film surfaces and with good uniformity at a high yield rate by metallizing the film of a compound or a solid solution which shows semiconductor characteristics in active hydrogen or active oxygen at a specified pressure in a vacuum vessel. CONSTITUTION:One of the gases, H2, O2 and N2 is introduced into a vacuum vessel at a pressure equal to or lower than 1 Torr and the gas is activated by flowing a current of 0.01-1mA in high speed electron geams under an accelerating voltage of 500-3,000V. The pressure of the introduced gas is lowered to 1X10<-3> Torr or lower, and a metallized film of, for example, CdS, CdSe, ZnS, CdTe or a solid solution of them is formed. Therefore, by changing the kind of the active gas, the conduction type of the metallized film can be changed. By so doing, a uniform metallized film for the metallized elements of a photoconductive type target for a television camera tube or a phototransistor, solar cell, etc., can be formed.
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