| 摘要 |
PURPOSE:To prevent the local concentration of current by lessening the reduction of effective area due to the concentration of current with the emitter of a semiconductor divided into a number of polygons and the edge length of the emitter increased and by equalizing the distance between the edges of an emitter contact and a base contact hole. CONSTITUTION:A P type base range 2 is formed in an N type semiconductor substrate 1, and a hexagonal N type emitter range 3 in the range 2. The range 3 consists of a number of polygons of which all the edges form abtuse angles with each other. A control range 4 shallower than a corrector joint is formed like a band to surround a base contact hole 7 at an equal distance from the contact JC. A current cource is formed in the base range 5 under the range 4 to pass between an emitter contact JE and base electrode 9. |
