Schottky barrier diode and method of making it.

摘要

The anode (40) and cathode (32) of the diode are contigously located on a semiconductor surface and separated by an insulating coating (36) on cathode contact (32). Preferably the anode (40) consists of two regions (40) separated by coated cathode contact (32) and laterally surrounded by recessed oxide area (16).
The method of making includes the steps of forming cathode contact (32) of a layer of conductive material and applying insulative coating (36) onto it where after this step at least one area of the semiconductor surface adjoining coated cathode contact (32) is exposed, of blanket depositing a metal layer and causing the reaction of the metal with the semiconductor material to produce anode (40) that is self-aligned with respect to cathode contact (32).
The diode may be incorporated into merged transistor logic devices in large scale integration applications.