发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a strong adhesivity of an electrode with a lower cost by employing a laminate of Ag and Au for a metal layer better in the solder wetting property which is formed on a laminated metal layer applied on the back of a semiconductor substrate to construct it. CONSTITUTION:A P type region 2 is diffused into the surface layer section of an N type semicondcutor substrate and an insulator film 4 is applied over the entire surface layer therof including the region. An opening is provided through the insulator film 4 to form the first electrode 5 as an positive electrode contacting the region 2. Then, a highly adhesive metal layer of Ti or Cr is applied on the back of the substrate 3 and a metal layer 7 of Ni or Cu with a good adhesivity to the solder is laid thereupon to make a negative electrode 9. The metal layer herein used is arranged as follows: An Ag layer 81 about 0.3mum thick is applied on the surface contacting the metal layer 7 and covered with a Cu layer 82 about 0.05mum thick. This provides an electrode with a better fluidity of the solder without use of Au.
申请公布号 JPS5690540(A) 申请公布日期 1981.07.22
申请号 JP19790168788 申请日期 1979.12.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERAO NOBORU
分类号 H01L21/52;H01L23/482 主分类号 H01L21/52
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