| 摘要 |
PURPOSE:To obtain an extremely fine Al pattern by a method wherein comprises applying an Al layer on a semiconductor substrate, covering said layer with a mask mutually complementing a specified electrode pattern, converting the Al surface exposed to an Al2O3 film, and dry etching the Al layer with said film as mask. CONSTITUTION:An Al layer 2 is applied on a semiconductor substrate 1 to make an electrode pattern afterward and provided thereon with a mask 3 mutually complementing a desired electrode pattern. An electrolyte liquid of ammonium boronate or the like is used to convert to an Al2O3 film 4 only the surface layer section of the layer 2 exposed into an opening of the mask 3 by positive oxidation. Then, the mask 3 is removed. Subsquently, with the film 4 as mask, a plasmaetching is made to remove the layer 2 not covered with the film 4 leaving a desired Al wiring 2' only under the film 4. Thereafter, while protection is provided between the wiring 2' with a resist layer 5, fluoric acid is used to remove the film 4 as unnecessary. In this manner, it is possible to obtain an Al pattern with a high reproducibility at a thickness of 2-3mum or less. |
