DEVICE FOR MAKING A CONTACT WITH A SEMICONDUCTOR ELEMENT

摘要

A device and a method for making a contact on a gallium arsenide face of a semiconductor element. The device comprises successively a first layer of titanium or chromium forming with the semiconductor an ohmic contact of low resistivity and partly covering the face; a layer of titanium or palladium completely covering the first layer and a layer of gold, partly covering the first layer and at least a part of the face and forming with the face a contact of much higher resistivity The layer of titanium or palladium forms a barrier layer between the two other layers. The invention is particularly applicable to laser diodes.