| 摘要 |
PURPOSE:To correct the error of dimensions in the etching process beforehand, by causing dimensions of plural element patterns, which are included in the mask for integrated circuit exposure, to be different relatively in the center part and the edge part of the mask. CONSTITUTION:In case of production of elements or circuits in the etching process out of production processes for the semiconductor device such as an integrated circuit, the etching advance quantity is different in the center part and the edge part of the wafer. The mask for exposure where dimensions are adjusted previously in consideration of this error is produced. For example, in mask 11 for exposure used for etching advance from the edge part of the wafer, dimensions of element patterns in lattice 14 placed in the edge part are set to large values relatively in comparison with those of element patterns in lattice 15 of the center part, and dimensions of element patterns in lattice 16 of the middle part are set to large values relatively in comparison with those of element patterns in lattice 15 of the center part. |
