| 发明名称 |
Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition |
| 摘要 |
A method for manufacturing a npn-type transistor includes steps of depositing phosphorus on a base region, covering the deposited phosphorus with a polycrystalline silicon layer and heating the deposited phosphorus to diffuse it into the base region to form an emitter region.
|
| 申请公布号 |
US4279671(A) |
申请公布日期 |
1981.07.21 |
| 申请号 |
US19780954326 |
申请日期 |
1978.10.24 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KOMATSU, SHIGERU |
| 分类号 |
H01L29/73;H01L21/225;H01L21/285;H01L21/3215;H01L21/331;(IPC1-7):H01L21/22;H01L21/20 |
主分类号 |
H01L29/73 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
