| 摘要 |
PURPOSE:To obtain a hyperfine mask pattern having a high aspect ratio by overlapping a plurality of mask patterns having a low aspect ratio and forming a secondary pattern through complete adhesive exposure using a previously shaped primary pattern. CONSTITUTION:A housing 1 consists of silicon, and a primary pattern 10 is shaped in such a manner that gold is evaporated onto the whole surface of a support film 2 and the pattern 10 is formed through a selective etching method. A negative type is used as a resist film 4, and selective exposure is conducted. The surface of the primary mask pattern 10 is exposed through etching while a trench 7 employing the exposed surface as a bottom is shaped to the resist film 4. A secondary mask pattern 20 is formed by evaporating gold. The resist film 4 is removed from the upper section of the support film 2 by acetone, and the metal 7 on the resist film is also gotten rid of through lift-off at that time. A mask pattern 30 completed is composed of the overlapping body of the first and second mask patterns. |
