发明名称 SPUTTERING METHOD
摘要 PURPOSE:To make the thickness and quality of a film formed uniform by placing a mask having an opening near the surface of a substrate support stand to intercept sputtered particles flying to a part except a part just under a target. CONSTITUTION:In order to prevent the formation of a film of sputtered particles flying to a part except a part just under target 1, shutter 6 having opening 7 is placed near the surfaces of substrates 3. The width of shutter opening 7 is made equal to or smaller than that of target 1. Sputtering is carried out while allowing the substrates to cross opening 7. Thus, an electromechanical coupling constant, magnetization, etc. are improved which are dependent on the electric conductivity of a semiconductor thin film, a resistor thin film or the like and the crystal axis orientation of a piezoelectric body thin film, a magnetic body thin film or the like.
申请公布号 JPS5687664(A) 申请公布日期 1981.07.16
申请号 JP19790164726 申请日期 1979.12.20
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IBARAKI NOBUKI;OANA YASUHISA
分类号 C23C14/04;C23C14/34;H01J37/34 主分类号 C23C14/04
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