Semiconductor device with high-ohmic layer - which is between low-ohmic layer and FETs to give power supply needing no conducting paths

摘要

The semiconductor device has a semiconductor element with a drain, source and gate together with a semi-isolating GaAs substrate. A low-ohmic layer (7) is connected to the supply voltage and separate from the semiconductor element (2-4) by a high-ohmic layer (5). Further low-ohmic and high-ohmic layers may be provided. The layers form a power supply for the semiconductor element that has no conducting paths (or at least very few). The low- ohmic layer may be metal or strongly doped and may have holes through which signal lines pass. The current path between low-ohmic layer (7) and drain (2) is very high-ohmic and therefore acts as a current source.