| 摘要 |
PURPOSE:To prevent a characteristic deterioration by removing carbons from a substrate surface by a method wherein an insulated film on an Si substrate is dipped in a low temperature oxygen plasma, after being applied a reactive ion etching with a gas of Freon system as a reaction gas. CONSTITUTION:The insulated coating of a silicon film oxide, film nitride, polycrystalline silicon and the like is applied to etching by a reactive ion etching method (RIE) with the gas of the Freon system as the reaction gas and after that, it is dipped in the oxygen plasma, thereby permitting the carbons immersed in the substrate surface during the RIE to be removed in the form CXOY. Whereby, as is clear from the graph, the electrical characteristics of semiconductor elements can be prevented from being deteriorated because of the removal of the carbons from the substrate. |
