发明名称 PATTERN FORMING METHOD BY CHARGED PARTICLE BEAMS AND DEVICE USED FOR IT
摘要 PURPOSE:To easily and accurately form a pattern difficult in a mask formation by a method wherein the charged particle beams are projected successibly using a plurality of the masks formed with openings corresponded to parts which are different from each other in a desired pattern. CONSTITUTION:The pattern such as forming a loop in which the openings are closed is divided into a plurality of the parts 33' and 37', a plurality of the masks are formed with the parts respectively as the openings, and after images of the openings are projected by the charged particle beams in the used of the first mask, the images in position adjusting patterns 34' and 38' are adapted to correctly by overlapped to effect projection of the images of the openings by using the second mask, and the both images of the openings 33' and 37' form one pattern. Wehreby the pattern difficult to be formed by a sheet of the mask alone can be exposed with ease and the correct pattern can be obtained due to unnecessity of the exposures many times.
申请公布号 JPS5687319(A) 申请公布日期 1981.07.15
申请号 JP19790163574 申请日期 1979.12.18
申请人 KOGYO GIJUTSUIN;CHO LSI GIJUTSU KENKYU KUMIAI 发明人 TARUI YASUO;OOTORI KOUICHIROU
分类号 H01L21/027;H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/027
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