| 摘要 |
PURPOSE:To eliminate the short-circuit and the leak within multilayer wirings when the multilayer wirings of polycrystalline Si are to be formed on the semiconductor substrate by a method wherein after the lower layer polycrystalline Si wiring is covered with an SiO2 film and with an insulating film having a large etching speed, the upper insulating film is removed and the upper layer wiring is performed. CONSTITUTION:An SiO2 film 102 is formed on a P type Si substrate 101. Then the lower layer polysilicon wiring 104 being added with phosphorus and the SiO2 film 105 to cover the wiring 104 are provided. The whole surface is covered with the insulating film 301 of Si3N4, Al2O3, etc., having larger etching speed than the SiO2 film 105. When etching is performed on the whole surface, the insulating film 302 is remained burying the groove part 106. Even the upper polysilicon wiring is provided on it, the short-circuit, the leak, etc. through the groove part of the SiO2 film are eliminated, and the multilayer wiring having a high yield and reliability can be obtained. |
