| 摘要 |
PURPOSE:To obtain superior and stable recording for a long time, by allowing an insulating face provided in the direction of arrangement of a multistylus electrode to protrude the part except that near the electrode toward a recording material. CONSTITUTION:Multistylus electrode 11 and insulating support material 12 opposite to recording material 12 are formed into the same plane, and insulating layer 15 of proper thickness is formed on this plane except the part near electrode 11 by coating or the like. Recording layer 18 consists of semiconductive base layer 17 and dielectric layer 16, and proper space gas 14 is obtained by contacting layer 15 of the head of electrode 11 with the surface of layer 16. The interval of gap 14 changes in accordance with conditions of voltage applied to electrode 11, thickness of layer 16 of recording layer 18, dielectric constant, etc., and its allowable range is considered as about 10-30mum. The optimal interval is easily obtained by controlling thickness of layer 15. An insulating material containing a fluorocarbon resin, etc. low in friction coefficient and high in mold releasing property is preferable for this insulating layer 15. |
