| 摘要 |
PURPOSE:To reduce the width of the field region of the subject semiconductor device by a method wherein the oxidation film, containing the impurities of the same conductive type as the substrate, is formed on the substrate corresponding to the field region and then a gate oxidation film is formed, while a high-density region is formed in self-matching manner by the heat treatment being performed when said oxidation film was formed. CONSTITUTION:On the P<-> substrate 9, an SiO2 film 10, including P type impurities such as boron and the like, is formed and then the film 10 is removed leaving the field region 3'. Then a gate oxidation film is grown. The boron contained in the SiO2 film 10 is diffused in self-matching by the heat treatment performed when growing the film 11 and a P<+> region 12 is formed. Using the region 12 as the field region, an MOSFETTr1, having a gate 15, a source, drains 13 and 14, and an MOSFETTr2, having a gate 15', a source, drains 13' and 14', are formed. These field regions are formed by leaving the resist, so the width of the field region can be reduced considerably. |
