| 摘要 |
PURPOSE:To reduce the floating capacity and to prevent the breaking of wire of the semiconductor device by a method wherein a semiconductor element is provided in an island region being separated by a P-N junction, the electrode wiring and pads are provided surrounding the island region putting an insulating film therebetween, and insulating films under the pads are formed to be thicker by burying. CONSTITUTION:For example, the N type island region 31 is provided being separated by the P-N junction between a P type substrate 41 and a P<+> type diffusion layer 32, and a P type diffusion gate region 36, an N<+> type source region 34 and a drain region 35 are formed to provide the J FET. The insulating film 33 are formed selectively by burying under the bonding pads 39, 40 of the source and drain. Accordingly the floating capacity generated by the bonding pads can be reduced, and the breaking of the electrode wiring can be eliminated. At this case, the insulating layer under the pads can be formed in a short time on account of the change in quality from the porous layer. |
