| 摘要 |
PURPOSE:To easily, safely and securely form wirings in narrow width by a method wherein an Mo layer and resist layer are laminated on a substrate in a prescribed pattern, and the Mo layer and the resist layer are removed after a conductor layer is attahced to the laminated layer over the whole surface. CONSTITUTION:After the Mo layer 5 and resist layer 6 in a prescribed pattern are formed on the Si substrate 1 through an SiO2 film 2, the conductor layer such as Al is evaporated on the whole surface and applied with a fuming nitric acid to completely dissolve the Mo layer 5 and resist layer 6 instantaneously, thereby permitting only Al on the resist layer to be lifted off to form the Al wiring layer in the predetermined pattern. Whereby the wirings in a fine pattern with narrow width are formed with ease and in certainty without producing a problem of a side-etching because Al is not directly etched. |
