| 摘要 |
PURPOSE:To eliminate relatively high-frequency solid pattern noise by performing bias charge injection from the input section of a charge transfer element through a high resistor. CONSTITUTION:The first phase gate electrodes 7, 8, 9 made of polycrystal Si and the second phase gate electrodes 10, 11 made of polycrystal Si are provided on a P type Si substrate and an input diffusion region 1 is provided on the substrate as well. A bias power source 27 is connected to the region 1 through a resistor 26 and bias charge is injected to CCD 2-6. The resistor 26 is provided on the substrate by adjoining the diffusion region to connect the resistor 26 to the power source 27 through the wiring 25 having low resistance. In this way, the bias charge fed to each CCD2-6 will almost be uniformed and solid pattern noise will be eliminated. |
